SSM6L56FE Datasheet, Toshiba Semiconductor

(1) 1.5-V drive (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS.

* High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 235 mΩ.